| 摘要 |
PURPOSE: A method for manufacturing a flexible display is provided to obtain a thin-film transistor having a high characteristic over a large area. CONSTITUTION: A first insulating film(102) that functions as a peeling layer is formed on a glass substrate(101) which forms a first substrate. Then, a silicon oxide film(103) is formed as a second insulating film. Subsequently, an amorphous silicon film(104) is formed on a second insulating film. Then, a solvent containing a metal element that promotes the crystallization of silicon therein is coated on the amorphous silicon film(104), to thereby form a water film(105), and a spin dry process is conducted using a spinner(106) into a state in which the metal element is brought in contact with the surface of the amorphous silicon film. Thereafter, a crystal silicon film(107) is obtained by conducting a heat treatment, and the crystalline silicon film is formed into an active layer(108), thereby forming a thin-film transistor. |
