| 摘要 |
Each memory cell is a memory transistor which is provided on a top side of a semiconductor body with a gate electrode (2) which is arranged in a trench between a source region (3) and a drain region (4), which are formed in the semiconductor material. The gate electrode is separated from the semiconductor material by dielectric material. At least between the source region and the gate electrode and between the drain region and the gate electrode there is an oxide-nitride-oxide layer sequence (5, 6, 7), which is provided for the purpose of trapping charge carriers at source and drain.
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