SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a high frequency bipolar transistor having excellent high frequency characteristics. SOLUTION: After an insulation film is partly formed on a first epitaxial layer on a collector region, a second epitaxial layer to be a base electrode is formed on the side face of the insulation film on the first epitaxial layer. After the insulation film is selectively removed to form an opening part, a sidewall and an emitter electrode are formed in this opening part.