| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method thereof capable of suppressing leakage current in device separation of an MOSFET using an SOI substrate. SOLUTION: In the semiconductor device provided with the MOSFET formed on an SOI substrate consisting of a support substrate 1, a first insulating film 2 and a silicon film 3, the side wall of the silicon film 3 selectively formed and used for the MOSFET is formed vertically, and a nitride film 5 is formed at least on the lower part of the side wall as a second insulating film. In this structure, the polycrystalline silicon film 8 is prevented from approaching the side wall of the silicon film 3 at the upper and the lower ends thereof.
|
