| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for crystallizing silicon which enables to form a silicon film having large grains from an amorphous silicon film. SOLUTION: The method for crystallizing silicon for crystallizing a silicon film of an amorphous layer comprises a process (a) of irradiating the silicon film with a first pulse laser beam having first intensity and first duration for melting it, a process (b) after melting the silicon film, irradiating the silicon film in the middle of a cooling process with second pulse laser light having second intensity and second duration, and growing generated silicon crystal grains without completely melting them, and a process (c) of repeating the processes (a) and (b), partially shifting a pulse laser irradiated region, to enlarge a crystallized region. Each of the first and the second pulse laser light is an integrated laser beam, having a wavelength in the range of 400 to 900 nm, from a plurality of laser diode-pumped solid-state lasers.
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