| 摘要 |
PROBLEM TO BE SOLVED: To increase the conductivity of a p-type buried layer. SOLUTION: A wafer is etched to form a trench of the p-type layer and expose the p-type layer so that hydrogen can be diffused outside the p-type layer of a semiconductor of a buried-type III group nitride compound. After etching, the wafer is annealed. The time and temperature of annealing depends on an interval of the exposed surface of the p-type layer and a thickness of the p-type layer. The hydrogen is easily diffused through the p-type layer from the surface exposed by the trench. Thereby, the buried p-type layer, whose conductivity is significantly higher than that of a p-type layer on which a trench is not formed before annealing, is attained. In another embodiment, a surface of a p-type layer of an acceptor-doped III to V group is covered with a n-type layer positioned over. A part of the n-type layer is etched to expose the surface of the p-type layer. Then, an annealing is carried out to increase the conductivity of p-type layer by diffusing hydrogen outside from the exposed surface of the p-type layer. |
