发明名称 |
SEMICONDUCTOR POWER CONVERTER |
摘要 |
PROBLEM TO BE SOLVED: To prevent an IGBT (Insulated Gate Bipolar Transistor) from being destroyed due to an overvoltage because of a voltage unbalance among the IGBTs when an overcurrent flows through the IGBTs connected in series configuring a power converter. SOLUTION: The power converter configured with a series connection of the IGBTs includes a means for increasing a gate voltage when a collector voltage of the IGBT gets higher and a means for increasing the gate voltage more than the gate voltage in a steady ON state of the IGBT when the collector voltage gets higher. |
申请公布号 |
JP2003069401(A) |
申请公布日期 |
2003.03.07 |
申请号 |
JP20010259121 |
申请日期 |
2001.08.29 |
申请人 |
HITACHI LTD |
发明人 |
KATO SHUJI;UEDA SHIGETA;SAKAI HIROMITSU;IKIMI TAKASHI;ITO TOMOMICHI |
分类号 |
H02M1/00;H03K17/08;H03K17/082;H03K17/10;H03K17/56 |
主分类号 |
H02M1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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