发明名称 SEMICONDUCTOR POWER CONVERTER
摘要 PROBLEM TO BE SOLVED: To prevent an IGBT (Insulated Gate Bipolar Transistor) from being destroyed due to an overvoltage because of a voltage unbalance among the IGBTs when an overcurrent flows through the IGBTs connected in series configuring a power converter. SOLUTION: The power converter configured with a series connection of the IGBTs includes a means for increasing a gate voltage when a collector voltage of the IGBT gets higher and a means for increasing the gate voltage more than the gate voltage in a steady ON state of the IGBT when the collector voltage gets higher.
申请公布号 JP2003069401(A) 申请公布日期 2003.03.07
申请号 JP20010259121 申请日期 2001.08.29
申请人 HITACHI LTD 发明人 KATO SHUJI;UEDA SHIGETA;SAKAI HIROMITSU;IKIMI TAKASHI;ITO TOMOMICHI
分类号 H02M1/00;H03K17/08;H03K17/082;H03K17/10;H03K17/56 主分类号 H02M1/00
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