发明名称 MEMORY CIRCUIT
摘要 PURPOSE: To perform error correction even if multi-bit software error with which a plurality of bit errors are caused simultaneously and locally is caused, in a memory circuit. CONSTITUTION: For example, when read/write operation of 7 bits data in which parity bits of 3 bits are added to 4 bits data is performed for a memory cell array 21, error correction is performed every 7 bits data. In the memory array 21, memory units 31-37 sectioned every 4 bits in the direction of word line are prescribed, when 7 bits data is written in the memory cell array 21, one bit data being different mutually out of 7 bits data is written in each of the memory units 31-37 in the direction of word line as write bit data, and write bit data has interval of 4 bits in 7 bits data. Each of error correction circuits 24a-24d performs error correction of 7 bits bit data using 7 bits data as a unit respectively.
申请公布号 KR20030019858(A) 申请公布日期 2003.03.07
申请号 KR20020044793 申请日期 2002.07.30
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 FUJINO TAKESHI;HATAKENAKA MAKOTO;MANGYO ATSUO;NII KOJI
分类号 G11C11/413;G06F11/08;G06F11/10;G11C7/00;G11C7/24;G11C11/401;G11C29/00;G11C29/42;(IPC1-7):G06F11/08 主分类号 G11C11/413
代理机构 代理人
主权项
地址