发明名称 METHOD FOR PROCESSING EDGE OF WAFER
摘要 PROBLEM TO BE SOLVED: To provide a method for processing the edge of a wafer, capable of solving a problem of chipping on the sharp edge of the wafer like a thinned wafer. SOLUTION: The method of processing the edge of the wafer comprises the steps of: generating a glow discharge along the inner surface of a cylinder which forms an open air-pressure discharge space; introducing a process gas into the discharge space; coating the wafer with a protective material except its edge; and processing the edge of the wafer coated with the protective material by passing it through the discharge space in the cylinder.
申请公布号 JP2003068704(A) 申请公布日期 2003.03.07
申请号 JP20010252949 申请日期 2001.08.23
申请人 ULVAC JAPAN LTD 发明人 TAKEI HIDEO;SAKIO SUSUMU
分类号 H01L21/302;H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/302
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