| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emitting diode which has a dispersed current and a light emitting area improved in utilization factor. SOLUTION: A semiconductor device is equipped with a substrate 11, a first semiconductor structure 12 on the substrate 11, a light emitting structure 13 located on the first part of the first semiconductor structure 12, a first contact structure 18 which is located on the second part of the semiconductor structure 12 separating from the first part and has a first shape, a second semiconductor structure on the light emitting structure, a transparent contact having a second shape located on the second semiconductor structure and provided with cutouts which uncover the second semiconductor structure partially, and a second contact structure 17 of a third shape located on the cutout of the transparent contact in contact with the second semiconductor structure. Current paths from the first contact structure to the second contact structure are so set as to be close to each other by a combination of the second contact structure having a third shape, the transparent contact structure having a second shape, and the first contact structure having a first shape. |
