| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a high-reliability semiconductor device with built-in protective elements in which the protective elements composed of polycrystal silicon are integrated. SOLUTION: The semiconductor device comprises a drift region 2 arranged in the upper part of a drain region 3, a plurality of base regions 4 and field relaxation regions 14 arranged in the upper part of the drift region 2, a source region 5 formed in upper parts of the base regions 4, a thin field insulating film 18 formed in upper parts of the regions 14, a polycrystal silicon film 13 formed in the upper part of the film 18, an interlayer insulating film 12 formed in the upper part of the film 13, a plurality of fine via holes C31 to C35 passing through the film 12 so as to expose the film 13, and bonding pads 7 connected to the film 13 via the via holes C31 to C35 .</p> |
