发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To improve foreign matter removing performance in a cleaning processing. SOLUTION: In cleaning a wafer 2, while moving a brush 7 from the center toward outer periphery of the wafer 2, discharge flow rates X1, X2 of a cleaning liquid to be made to flow are adjusted, so that distances d1, d2 between the brush 7 and the wafer 2 become constant.
申请公布号 JP2003068695(A) 申请公布日期 2003.03.07
申请号 JP20010259111 申请日期 2001.08.29
申请人 HITACHI LTD 发明人 SHIMADA YUTAKA;MORI YASUHIRO;MORITA MITSUHIRO;YOKOSHIMA KENJI
分类号 H01L21/304;B08B1/00;B08B1/04;H01L21/00;(IPC1-7):H01L21/304 主分类号 H01L21/304
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