| 摘要 |
PROBLEM TO BE SOLVED: To provide a liquid phase growing device and a liquid phase growing method using the same, with which epitaxial layers can be formed in the same lot, while reducing dispersion of impurity concentration. SOLUTION: A liquid phase growing device 1 has a reaction pipe 3, a gas supply part 2 for making a process gas containing an impurity flow out into a growth reaction chamber 9 and a buffle 4 formed with a hole 10 for regulating the flow rate of the process gas G in the growth reaction chamber 9. When a horizontal reference line is set to equally bisect the vertical length of a hole forming surface 4b in the buffle 4, the region of the hole-forming surface 4b located higher than the horizontal reference line is defined as a first region and the lower region is defined as a second region. The hole 10 is formed, so that either the total area of the first region is larger than the total area of the second region, or is formed only in the first region.
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