发明名称 LASER IRRADIATION STAGE, DEVICE AND METHOD FOR LASER IRRADIATION AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To shorten the length of the optical path of an optical system for forming a linear shape beam, since footprint is increased by much elongating the optical path, when the length of the linear shape beam is made into 300 nm to 1,000 nm or more, even through it is necessary to develop a much longer linear shape beam as the output of laser oscillators becomes higher in the laser anneal process of a semiconductor film. SOLUTION: The length of the optical path of the optical system is made as short as possible, and in order to make only the length of the linear shape beam long, it is better to make the semiconductor film have a curvature radius in the lengthwise direction of the linear shape beam. When the size of the linear shape beam is 1 m×0.4 mm, for example, the length of the optical path of the optical system is required for about 10 m, but when a radius of curvature of 40,000 mm is applied to a semiconductor film 11, the length of the optical path of the optical system can be halved, down to approximately 5 m, and a linear shape beam 1110 having a very uniform energy distribution can be provided.
申请公布号 JP2003068668(A) 申请公布日期 2003.03.07
申请号 JP20020174158 申请日期 2002.06.14
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 TANAKA KOICHIRO
分类号 H01L21/20;H01L21/268;H01L21/336;H01L29/786;H01S3/00;(IPC1-7):H01L21/268 主分类号 H01L21/20
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