DRY ETCHING METHOD FOR TRANSPARENT CONDUCTIVE FILM

摘要

PROBLEM TO BE SOLVED: To provide a dry etching method capable of increasing an etching rate for a transparent conductive film on a substrate to 1500 to 2000Å/min. without impairing a selection ratio and also suppressing dusting. SOLUTION: When the transparent conductive film on the substrate is etched by using the high frequency plasma of etching gas, the transparent conductive film is heated to 130 deg.C or higher by using at least gaseous hydrogen iodide as the etching gas to heat the inside wall of a vacuum chamber to 80 to 200 deg.C.