METHOD FOR EVALUATING SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, DEVICE FOR EVALUATING SEMICONDUCTOR DEVICE, AND EVALUATION PROGRAM

摘要

PROBLEM TO BE SOLVED: To measure deterioration of retention of a flash memory in a short time and with high accuracy. SOLUTION: The total electron injection quantity QBD in the case when the occurrence rate of dielectric breakdown of a 7 nm thick silicon oxide film reaches 63.2% is obtained. Next, the Weibull slopeβμB of the total electron injection quantity QμB and QμB in which the occurrence ofμB-SILC is expected statistically in 63.2% test pieces is obtained using a percolate simulation. Injection electron quantity QμB (W) in an arbitrary retention deterioration occurrence rate (W) can be obtained from the relation ofβμB, QμB.