LAMINATED GATE STRUCTURE FOR NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY CELL, NONVOLATILE MEMORY DEVICE AND NOR TYPE NONVOLATILE MEMORY CELL

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile memory device having a new sidewall spacer structure to improve reliability. SOLUTION: A laminated gate structure used for the nonvolatile memory device comprises a semiconductor substrate and a laminated gate formed on the substrate. The laminated gate has a sidewall and an upper part surface. The memory device further comprises a multilayer spacer structure formed on a sidewall of the laminated gate. The multilayer spacer structure has a first oxide film, a first nitride film, a second oxide film and a second nitride film sequentially laminated. Thus, even when the second nitride film is penetrated or damaged by etching while forming a contact hole, the sidewall of the laminated gate of the nonvolatile memory cell is protected against moving charge such as a moving ion or the like by the first nitride film. In addition, a damage of a source/drain region or an element isolation region due to etching can be minimized.