发明名称 GATE DRIVE CIRCUIT
摘要 PROBLEM TO BE SOLVED: To control the rate of change in a gate potential to a desirable value without increasing the magnitude of a gate resistor. SOLUTION: The oscillation of the gate potential is prevented by decreasing the rate of change in the gate potential without any increase in a gate resistor R5 of IGBT Q13. Thus, in accordance with the on/off control of a switching control circuit SWC, a gate potential control circuit GPC1 discharges a node of a gate when it increases (at turn-on) and charges the node conversely when it decreases (at turn-off).
申请公布号 JP2003070233(A) 申请公布日期 2003.03.07
申请号 JP20010255791 申请日期 2001.08.27
申请人 TOSHIBA CORP 发明人 MIYAZAKI YUJI
分类号 H02M1/08;(IPC1-7):H02M1/08 主分类号 H02M1/08
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