METHOD FOR PRODUCING EPITAXIAL SUBSTRATE, METHOD FOR FABRICATING SEMICONDUCTOR ELEMENT, AND EPITAXIAL SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a high quality semiconductor epitaxial substrate while up scaling a semiconductor material producing only a small size crystal to practical size. SOLUTION: The method for producing an epitaxial substrate comprises a step for preparing a supporting substrate 300, a step for preparing a plurality of planar crystal substrates 201-204, a step for implanting ions from one major surface of the crystal substrates 201-204 to form ion implantation layers 201c-204c, a step for pasting the plurality of crystal substrates 201-204 and the supporting substrate 300 one another, a step for separating the plurality of crystal substrates 201-204 into a plurality of thin film tiles 201a-204a bonded to the first major surface and a plurality of parent material side crystal substrates 201b-204b by heat treatment, and a step for growing a single crystal layer 301 epitaxially on the sauce of the thin film tiles 201a-204a.