| 摘要 |
PROBLEM TO BE SOLVED: To prevent reduction of built-in potential due to the influence of crystal defects or the like. SOLUTION: After an n<-> -type drift layer 2 is film-formed on the surface of an n<+> -type substrate 1, the surface layer section of the n<-> -type drift layer 2 is etched for forming a recess 3. After this, a p<+> -type layer is subjected to epitaxial growth on the surface of the substrate so that the recess 3 is buried for carrying out etching back, thus making the p<+> -type layer flat, and forming first and second gate regions 4 and 5. Successively, an n-type source region 7 is subjected to epitaxial growth. At this time, in the n-type source region 7, impurity concentration is allowed to thicken from the surface of a channel region 6 in order. Then, after the unnecessary portion of the n-type source region 7 is removed by photo etching, formation processes are carried out. The formation processes include the formation process of an interlayer insulating film 11, that of a contact hole, that of first and second gate electrodes 8 and 9 and a source electrode 10, and that of a drain electrode 12.
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