SEMICONDUCTOR POWER CONVERTER

摘要

PROBLEM TO BE SOLVED: To provide a means of preventing turn-off loss from increasing by excessively clamping a collector voltage when the voltage rise ratio (dv/dt) of collector voltage of IGBT becomes high. SOLUTION: This power converter includes a circuit structure in which the collector voltage of IGBT is divided, and a means of protecting IGBT from overvoltage application to a collector by outputting a voltage at a voltage- divided position, to fix a housing for a resistor on the voltage side higher than the voltage-dividing point to an emitter potential of IGBT.