| 摘要 |
PROBLEM TO BE SOLVED: To make the enhancement of the performance of a vertical semiconductor device and the enhancement of its mechanical strength compatible. SOLUTION: For example, a p-type base layer 12 is formed M the surface of an n<-> semiconductor substrate 11, and an n<+> emitter layer 13 is formed on the surface of the layer 12. An emitter electrode 14 and a gate electrode 16 are formed on the surface of the substrate 11. An n<+> buffer layer 21 and a p<+> collector layer 17 are formed on the lower side of the substrate 11. Consequently, the semiconductor device is constituted in such a way that a punchthrough-type IGBT of a planar gate structure is realized, and that a bonding substrate 22 is bonded to the p<+> collector layer 17.
|
