发明名称 SEMICONDUCTOR WAFER DICING METHOD AND POLYMER POROUS FILM TO BE USED THEREFOR
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor wafer dicing method, with which mass- productivity is improved, elements will not scatter, when cutting a semiconductor wafer or elements damaged, when dividing the device by a pickup, and to provide a polymer porous film to be used therefor as a fixing tool. SOLUTION: In the semiconductor wafer dicing method for fixing the semiconductor wafer and devices by reducing a pressure, when dividing the semiconductor wafer into devices by dicing, the polymer porous film provided with a viscous layer having the peeling strength of <=50 gf is interposed on a porous film formed by sintering, while having the porosity in the range of 10 to 50% and the gas permeability of from 0.1 to 100 sec between the stage of a pressure reducer and the semiconductor wafer. In the polymer porous film for semiconductor wafer dicing, a viscous layer, having the peeling strength of <=50 gf, is provided on the porous film having the porosity of 10 to 50% and gas permeability of 0.1 to 100 sec by drying and burning a diffusion medium after a slurry, with which particulates are diffused in the diffusion medium, is continuously applied onto a carrier.</p>
申请公布号 JP2003068679(A) 申请公布日期 2003.03.07
申请号 JP20010256315 申请日期 2001.08.27
申请人 HITACHI CHEM CO LTD 发明人 DOBASHI AKIHIKO;SUZUKI KYOSUKE
分类号 C08J9/24;H01L21/301;H01L21/68;H01L21/683;(IPC1-7):H01L21/301 主分类号 C08J9/24
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