| 摘要 |
<p>PROBLEM TO BE SOLVED: To form a high-quality polysilicon layer having uniformly oriented crystal grains, to increase the size of the crystal grains for improving electron mobility in the polysilicon, and to provide a polysilicon thin film transistor having superior electrical characteristics and a liquid crystal display using the high-quality polysilicon layer. SOLUTION: A method for crystallizing polysilicon comprises a step of forming a polysilicon layer on a substrate, a step of making grains of the polysilicon layer amorphous excluding a portion of the grains having specific orientation, and a step of crystallizing the polysilicon layer, using the grains having the specific orientation.</p> |
