| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device that cannot be turned on by noise. SOLUTION: A plurality of first gate regions 3 comprising a p<+> -type layer are formed at specific intervals at the middle layer section of an n<-> -type drift layer 2, and at the same time a second gate region 4 is formed in a region sandwiched by the first gate regions 3 so that the second gate region 4 is alienated from each first gate region 3 at even intervals. Additionally, an n<+> -type source region 5 is formed at the surface layer section of the n<-> -type drift layer 2. Furthermore, a trench 7 that passes through the n<+> -type source region 5 for reaching the second gate region 4 is formed in the n<-> -type drift layer 2. A gate oxide film 8 and a MOS gate 9 are film-formed on the inner wall of the trench 7 successively. By such configuration, a silicon carbide semiconductor device where a J-FET and a MOSFET are combined can be achieved. In this case, the MOSFET is not turned on even if the J-FET is turned on by noise, thus preventing the silicon carbide semiconductor device from being turned on by noise.
|
