| 摘要 |
PROBLEM TO BE SOLVED: To provide a practical silicon carbide semiconductor device in a new configuration, and to provide a method for manufacturing a silicon carbide semiconductor device. SOLUTION: An n<-> drift layer 2, a first gate layer (p<+> layer) 3, and a p-type source layer 4 are formed on an n<+> SiC substrate 1 successively, and at the same time a second gate layer (p<+> layer) 8 is formed in a trench 6 via an n<-> channel layer 7. The drift layer 2, first gate layer 3, source layer 4, channel layer 7, and second gate layer 8 are formed in an epitaxial layer, and at the same time an n<+> source layer 5 by ion implantation is formed at the surface layer section of the epitaxial layer 4 as a source layer.
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