SUBSTRATE PROCESSING SYSTEM FOR PERFORMING EXPOSURE PROCESS IN GAS ATMOSPHERE

摘要

PURPOSE: A substrate processing system for performing exposure process in gas atmosphere is provided to precisely control a reflow distance L of the photo resist patterns when element patterns are formed by using a reflow process of photo resist patterns. CONSTITUTION: A substrate processing system(100) comprises an exposure process chamber(101), a gas introducing mechanism(120) which introduces an exposure process gas into the exposure process chamber, and a gas spray mechanism which sprays the exposure process gas onto a substrate. The exposure process chamber has a lower chamber(10) and an upper chamber(20). The lower chamber and the upper chamber are joined together via an O-ring(121) attached to the lower chamber, and thereby an airtight space is formed within the chamber. A gas spray mechanism(110) comprises a plurality of gas introducing pipes(24), gas diffusing members(23) each of which is attached to an end portion of the gas introducing pipe, a gas spouting plate(21), and a frame(212) for the gas spouting plate which fixes the gas spouting plate and which defines an area of gas spouting.