发明名称 |
High aspect ratio contact structure with reduced silicon consumption |
摘要 |
A high aspect ratio contact structure formed over a junction region in a silicon substrate comprises a titanium interspersed with titanium silicide layer that is deposited in the contact opening and directly contacts an upper surface of the substrate. Silicon-doping of CVD titanium, from the addition of SiH4 during deposition, reduces consumption of substrate silicon during the subsequent silicidation reaction in which the titanium reacts with silicon to form a titanium silicide layer that provides low resistance electrical contacts between the junction region and the silicon substrate. The contact structure further comprises a titanium nitride contact fill that is deposited in the contact opening and fills substantially the entire contact opening.
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申请公布号 |
US2003042550(A1) |
申请公布日期 |
2003.03.06 |
申请号 |
US20010944903 |
申请日期 |
2001.08.30 |
申请人 |
DERRAA AMMAR;SHARAN SUJIT;CASTROVILLO PAUL |
发明人 |
DERRAA AMMAR;SHARAN SUJIT;CASTROVILLO PAUL |
分类号 |
H01L21/285;H01L21/4763;H01L21/768;H01L29/45;(IPC1-7):H01L29/76;H01L29/94 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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