METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING DOUBLE EXPOSURE

摘要

PURPOSE: A method for manufacturing a semiconductor device using a double exposure is provided to prevent a profile damage of a cell edge pattern by using a dummy open mask. CONSTITUTION: A photoresist layer is coated on a semiconductor substrate having an etch object layer. The photoresist layer is firstly exposed by using an exposure mask including a cell region and a dummy cell region. Then, the photoresist layer is secondly exposed by using a dummy open mask(30) for opening the dummy cell region, thereby forming a photoresist pattern. The etch object layer is selectively etched by using the photoresist pattern as a mask, thereby forming a cell pattern in the cell region.