发明名称 |
Non-volatile semiconductor memory device having shared row selection circuit |
摘要 |
A NAND flash memory device includes a first and second memory blocks. A shared row selection circuit is provided between the first and second memory blocks, selectively or simultaneously selecting the first and second memory blocks, and transferring wordline voltages to a selected memory block by means in a multi-boosting manner.
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申请公布号 |
US2003043686(A1) |
申请公布日期 |
2003.03.06 |
申请号 |
US20020222573 |
申请日期 |
2002.08.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JIN-YUB;LEE JUNE |
分类号 |
G11C16/06;G11C16/04;G11C16/08;(IPC1-7):G11C5/00 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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