| 摘要 |
An HDP-CVD apparatus includes: a reactive chamber constructed with a lower chamber with an opened upper portion and a ceramic dome covering the upper portion of the lower chamber; a gas discharge pipe installed at the lower chamber; an RF coil installed to cover an outer wall of the ceramic dome; a gas injection pipe inserted into a wall of the ceramic dome through a marginal end portion of the ceramic dome from the outside of the reactive chamber, guided to the middle portion of the ceramic dome, and come out in the internal space of the reactive chamber at the middle portion of the ceramic dome; and a substrate support installed inside the reactive chamber in order to mount a substrate. Since the process gas is pre-heated, a reactivity is improved and a very high density plasma can be obtained. In addition, since the process gas is supplied from the upper central portion of the reactive chamber, a high density plasma can be formed at the central portion of the reactive chamber where the deposition process is substantially performed. Thus, a deposition efficiency is increased and a gap can be filled without a void.
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