发明名称 |
Semiconductor memory device and method for manufacturing the same |
摘要 |
A semiconductor memory device of the present invention includes: a semiconductor substrate; a memory cell capacitor for storing data, including a first electrode provided above the semiconductor substrate, a capacitance insulating film formed on the first electrode, and a second electrode provided on the capacitance insulating film; a step reducing film covering an upper surface and a side surface of the memory cell capacitor; and an overlying hydrogen barrier film covering the step reducing film.
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申请公布号 |
US2003042522(A1) |
申请公布日期 |
2003.03.06 |
申请号 |
US20020053693 |
申请日期 |
2002.01.24 |
申请人 |
MIKAWA TAKUMI;KUTSUNAI TOSHIE;JUDAI YUJI |
发明人 |
MIKAWA TAKUMI;KUTSUNAI TOSHIE;JUDAI YUJI |
分类号 |
H01L27/105;H01L21/02;H01L21/8242;H01L21/8246;H01L27/108;H01L27/115;(IPC1-7):H01L27/108;H01L29/04;H01L29/76;H01L29/94 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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