Semiconductor memory device

摘要

A semiconductor memory device assembled in a flip chip package includes a memory cell array divided into subarrays arranged in matrix form, and a peripheral circuit area and a pad area formed in middle sections of the subarray matrix. The pad area includes pads arranged at the same pitches as those of the subarrays, and a signal connecting the peripheral circuit area and each of the subarrays is linearly formed so as to pass between the pads. The variations of delay time of signals supplied to the subarrays are avoided and the transmission time of signals is kept constant, thereby achieving a high-speed operation.