发明名称 METHOD AND APPARATUS FOR CHEMICAL MECHANICAL PLANARIZATION END-O F-POLISH OPTIMIZATION
摘要 <p>A system and method are provided that uses a high pressure, high pH rinse to clear the slurry particles from a semiconductor polishing pad. While the high pressure spray is removing the slurry from the pad, a low downforce is applied to the wafer. Once the slurry has been cleared from the pad the semiconductor wafer is rinsed with deionized water to bring the pH at the surface of the wafer back to neutral.</p>
申请公布号 WO2003018256(A1) 申请公布日期 2003.03.06
申请号 IB2002003443 申请日期 2002.08.21
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