发明名称 SEMICONDUCTOR PROCESSING USING AN EFFICIENTLY COUPLED GAS SOURCE
摘要 A semiconductor processing system includes a processing chamber system and an activated gas source coupled to the chamber system. The gas source includes a primary winding coupled to an RF generator and a secondary winding effectively formed by the conductance of a plasma filled passageway in a toroidal chamber. The primary winding and the secondary winding are coaxially aligned to provide a suitable inductive coupling between the windings.
申请公布号 WO03018867(A1) 申请公布日期 2003.03.06
申请号 WO2002US27939 申请日期 2002.08.29
申请人 APPLIED MATERIALS, INC. 发明人 SORENSEN, CARL, A.;ELLINGBOE, ALBERT, R.;SHANG, QUANYUAN;BLONIGAN, WENDELL, T.;WHITE, JOHN, M.
分类号 C23C16/44;C23C16/452;H01J37/32;(IPC1-7):C23C16/00;C23F1/00 主分类号 C23C16/44
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