SEMICONDUCTOR PROCESSING USING AN EFFICIENTLY COUPLED GAS SOURCE
摘要
A semiconductor processing system includes a processing chamber system and an activated gas source coupled to the chamber system. The gas source includes a primary winding coupled to an RF generator and a secondary winding effectively formed by the conductance of a plasma filled passageway in a toroidal chamber. The primary winding and the secondary winding are coaxially aligned to provide a suitable inductive coupling between the windings.
申请公布号
WO03018867(A1)
申请公布日期
2003.03.06
申请号
WO2002US27939
申请日期
2002.08.29
申请人
APPLIED MATERIALS, INC.
发明人
SORENSEN, CARL, A.;ELLINGBOE, ALBERT, R.;SHANG, QUANYUAN;BLONIGAN, WENDELL, T.;WHITE, JOHN, M.