发明名称 Semiconductor power conversion apparatus
摘要 A power conversion apparatus has a circuit configuration in which a collector voltage of an IGBT is divided. It also has a unit which protects the IGBT against overvoltages applied to the collector by outputting a potential of a voltage dividing point to a gate of the IGBT. A case of a resistor on the high-voltage side of the voltage dividing point is fixed to an emitter potential of the IGBT.
申请公布号 US2003045041(A1) 申请公布日期 2003.03.06
申请号 US20020095102 申请日期 2002.03.12
申请人 KATOH SHUJI;UEDA SHIGETA;SAKAI HIROMITSU;IKIMI TAKASHI;ITO TOMOMICHI 发明人 KATOH SHUJI;UEDA SHIGETA;SAKAI HIROMITSU;IKIMI TAKASHI;ITO TOMOMICHI
分类号 H01L27/06;H02M1/00;H03K17/00;H03K17/082;(IPC1-7):H01L21/823 主分类号 H01L27/06
代理机构 代理人
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