发明名称 |
Semiconductor power conversion apparatus |
摘要 |
A power conversion apparatus has a circuit configuration in which a collector voltage of an IGBT is divided. It also has a unit which protects the IGBT against overvoltages applied to the collector by outputting a potential of a voltage dividing point to a gate of the IGBT. A case of a resistor on the high-voltage side of the voltage dividing point is fixed to an emitter potential of the IGBT.
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申请公布号 |
US2003045041(A1) |
申请公布日期 |
2003.03.06 |
申请号 |
US20020095102 |
申请日期 |
2002.03.12 |
申请人 |
KATOH SHUJI;UEDA SHIGETA;SAKAI HIROMITSU;IKIMI TAKASHI;ITO TOMOMICHI |
发明人 |
KATOH SHUJI;UEDA SHIGETA;SAKAI HIROMITSU;IKIMI TAKASHI;ITO TOMOMICHI |
分类号 |
H01L27/06;H02M1/00;H03K17/00;H03K17/082;(IPC1-7):H01L21/823 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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