A process for manufacturing a semiconductor wafer comprises first etching the wafer to reduce damage on the front and back surfaces. An epitaxial layer is grown on the etched front surface of the semiconductor wafer to improve the surface roughness of the front surface. Finally, the front surface of the wafer is final polished to further improve the surface roughness of the front surface.
申请公布号
WO02052643(A3)
申请公布日期
2003.03.06
申请号
WO2001US49942
申请日期
2001.12.21
申请人
MEMC ELECTRONIC MATERIALS, INC.
发明人
RIES, MICHAEL, J.;WILSON, GREGORY, M.;STANDLEY, ROBERT, W.;SHIVE, LARRY, W.;ROSSI, JON