发明名称 SEMICONDUCTOR WAFER MANUFACTURING PROCESS
摘要 A process for manufacturing a semiconductor wafer comprises first etching the wafer to reduce damage on the front and back surfaces. An epitaxial layer is grown on the etched front surface of the semiconductor wafer to improve the surface roughness of the front surface. Finally, the front surface of the wafer is final polished to further improve the surface roughness of the front surface.
申请公布号 WO02052643(A3) 申请公布日期 2003.03.06
申请号 WO2001US49942 申请日期 2001.12.21
申请人 MEMC ELECTRONIC MATERIALS, INC. 发明人 RIES, MICHAEL, J.;WILSON, GREGORY, M.;STANDLEY, ROBERT, W.;SHIVE, LARRY, W.;ROSSI, JON
分类号 C30B23/00;C30B25/00;C30B28/12;C30B28/14;H01L21/00;H01L21/20;H01L21/205;H01L21/302;H01L21/304;H01L21/322;H01L23/00 主分类号 C30B23/00
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