Elimination of via-resistance-shift by increasing via size at a last level

摘要

Semiconductor devices and methods are disclosed which address resistance shift reliability problems. At least one conductive level is included which has first vias formed in an organic material. The first vias include first contacts formed therein having a first layout dimension. An organic dielectric layer is formed on the at least one conductive level including second vias. The second vias include second contacts formed therein having a second layout dimension greater than the first layout dimension. An inorganic dielectric layer is formed on the organic dielectric layer. The employing this structure resistance shift reliability is prevented.