发明名称 Manufacturing method of semiconductor integrated circuit device
摘要 A foreign-matter removal capacity is improved in a cleaning process. When a wafer is cleaned while a brush is moved from the center of the wafer toward the outer circumference thereof, a discharge flow rate of cleaning liquid flowing into the brush is regulated so that the interval between the brush and the wafer is kept constant.
申请公布号 US2003041878(A1) 申请公布日期 2003.03.06
申请号 US20020083402 申请日期 2002.02.27
申请人 HITACHI, LTD. 发明人 SHIMADA YUTAKA;MORI YASUHIRO;MORITA KOYO;YOKOSHIMA KENJI
分类号 H01L21/304;B08B1/00;B08B1/04;H01L21/00;(IPC1-7):B08B7/04 主分类号 H01L21/304
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