发明名称 |
Method for fabricating a bipolar transistor having self-aligned emitter and base |
摘要 |
A method for forming a self-aligned bipolar transistor includes the steps of combination etching a silicon substrate in an opening to form a concave surface on the silicon substrate, and forming an intrinsic base and an associated emitter on the concave surface. The combination etching includes an isotropic etching and subsequent wet etching. The concave surface increases the distance between the external base for the intrinsic base and the emitter to thereby increase the emitter-base breakdown voltage.
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申请公布号 |
US2003045066(A1) |
申请公布日期 |
2003.03.06 |
申请号 |
US20020227414 |
申请日期 |
2002.08.26 |
申请人 |
NEC COMPOUND SEMICONDUCTOR DEVICES, LTD. |
发明人 |
IGARASHI TOMOHIRO |
分类号 |
H01L21/331;H01L29/08;H01L29/10;H01L29/417;H01L29/732;(IPC1-7):H01L21/331;H01L27/082;H01L27/102;H01L31/11;H01L29/70 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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地址 |
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