发明名称 |
ROOM TEMPERATURE LUMINESCENT ERBIUM OXIDE THIN FILMS FOR PHOTONICS |
摘要 |
A system for producing Erbium Oxide thin films with increased photoluminescence. The system includes a depositing stage for forming Erbium Oxide molecules by reacting Erbium sputtered atoms with O2 in a gas phase and creating the Erbium Oxide thin film by depositing the Erbium Oxide molecules on a substrate coated with Silicon Oxide. The system further includes an annealing stage for annealing the Erbium Oxide thin films by utilizing a low temperature treatment for a specified amount of time and temperature followed by a high temperature treatment for another specified amount of time and temperature, wherein the crystallinity of the thin films has improved. |
申请公布号 |
WO02081770(A3) |
申请公布日期 |
2003.03.06 |
申请号 |
WO2001US44037 |
申请日期 |
2001.11.21 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
CHEN, KEVIN, M.;KIMERLING, LIONEL, C. |
分类号 |
C03C17/34;C09K11/77;C23C14/02;C23C14/08;C23C14/58 |
主分类号 |
C03C17/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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