| 摘要 |
<p>The invention concerns a method for making a colour image sensor. The method comprises: forming, on the front surface of a semiconductor wafer (10), a series of active zones comprising image detection circuits and corresponding each to a respective image sensor, each active zone being surrounded with input/output connections (22); transferring the wafer by its front surface against the front surface of a support substrate (20); eliminating the major part of the thickness of the semiconductor wafer, leaving on the substrate a fine semiconductor film which has been thinned. Additionally, the method comprises: deposition and etching of coloured filter layers 818) on the thinned semiconductor wafer; prior to transferring the semiconductor wafer on the substrate, on the semiconductor wafer front surface metallized apertures (25) have been formed extending deeper than the elements of the image detecting circuits formed on the surface of the semiconductor wafer; and the thinning step comprises the stripping from the rear of the metallization (22) the metallized apertures.</p> |
