发明名称 Semiconductor laser with a weakly coupled grating
摘要 A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.
申请公布号 US2003043874(A1) 申请公布日期 2003.03.06
申请号 US20020212463 申请日期 2002.08.05
申请人 NANOPLUS GMBH 发明人 REITHMAIER JOHANN PETER;BACH LARS
分类号 H01S5/0625;H01S5/12;H01S5/125;H01S5/22;(IPC1-7):H01S5/00 主分类号 H01S5/0625
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