发明名称 Electro-static discharge protecting circuit
摘要 A drain of an n-channel MOS transistor NT1 is connected to an input terminal IN for supplying an input signal to a main circuit MC, and also a source of the transistor NT1 is connected to a reference potential Vss. A source of a p-channel MOS transistor PT1 is connected to the input terminal IN, a current limiting resistor R1 is connected between the drain of the transistor PT1 and the reference potential Vss, and a source voltage Vdd=+5 [V] is supplied to the gate of the transistor PT1. An interconnection point Q1 between the drain of the transistor PT1 and the resistor R1 is connected to the gate of the transistor NT1 directly or via a gate protecting resistor R2.
申请公布号 US2003043517(A1) 申请公布日期 2003.03.06
申请号 US20020225536 申请日期 2002.08.21
申请人 YAMAHA CORPORATION 发明人 TSUJI NOBUAKI;MAENO TERUMITSU
分类号 H01L27/04;H01L21/822;H01L21/8234;H01L23/60;H01L27/02;H01L27/088;H02H9/00;(IPC1-7):H02H9/00 主分类号 H01L27/04
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