METHOD FOR FORMING SPACER

摘要

PURPOSE: A method for forming a spacer is provided to reduce a short channel phenomenon by minimizing a recessing phenomenon of a horizontal projection portion of a spacer in an etch process for removing a spacer. CONSTITUTION: A gate pattern(150) is formed on a semiconductor substrate(100). The first insulating layer is formed on an entire surface of the semiconductor substrate(100). The second insulating layer is formed on the first insulating layer under the first pressure. The third insulating layer is formed on the second insulating layer under the second pressure. A spacer and the second insulating layer pattern(215) are formed by etching the third and the second insulating layer. The spacer is removed by using an etch recipe. The first insulating layer pattern is formed by etching the first insulating layer.