发明名称 POWER CONTROL METHOD FOR SEMICONDUCTOR MEMORY, AND SEMICONDUCTOR MEMORY
摘要 PURPOSE: To greatly reduce power consumption while being in a standby state. CONSTITUTION: A power control method for this semiconductor memory is provided with a super low power consumption mode by which power control is performed in a standby state, this super low power consumption mode includes a burst/self-refresh state BSST, a power-off state PFST, and a power on state PNST, in the burst/self-refresh state BSST, memory cells are refreshed concentrically, in the power off state PFST, internal power source circuits are turned off partially, in the power-on state, the internal power source circuits turned off partially are turned on.
申请公布号 KR20030019154(A) 申请公布日期 2003.03.06
申请号 KR20020050968 申请日期 2002.08.27
申请人 ELPIDA MEMORY, INC.;HITACHI ULSI SYSTEMS CO., LTD.;HITACHI, CO., LTD. 发明人 HASHIMOTO TAKESHI;ITO YUTAKA;KATO HIDEAKI;NAKAI KIYOSHI
分类号 G11C11/407;G11C7/10;G11C11/401;G11C11/403;G11C11/406;G11C11/4074;G11C29/42;(IPC1-7):G11C11/407 主分类号 G11C11/407
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