ETCH PROCESS FOR DIELECTRIC MATERIALS COMPRISING OXIDIZED ORGANO SILANE MATERIALS

摘要

The present invention provides a novel etching technique for etching a layer of C-doped silicon oxide, such as a partially oxidized organo silane material. This technique, employing CH2F2/Ar chemistry at low bias and low to intermediate pressure, provides high etch selectivity to silicon oxide and improved selectivity to organic photoresist. Structures including a layer of partially oxidized organo silane material (1004) deposited on a layer of silicon oxide (1002) were etched according to the novel technique, forming relatively narrow trenches (1010, 1012, 1014, 1016) and wider trenches. The technique is also suitable for forming dual damascene structures In additional embodiments, manufacturing systems are provided for fabricating IC structures of the present invention. These systems include a controller that is adapted for interacting with a plurality of fabricating stations.