Growing silicon germanium mixed crystal, for use in micro-and optoelectronics - by melting e.g. one component in a crucible, fixing a solid additive component in the growth chamber above the melt, adjusting the thermal equilibrium and stabilising, etc.

摘要

The process for mixed crystal pulling by the Czochralski method involves (a) producing a melt (1) of at least one component in a crucible (2); (b) fixing a solid additive component in the growth chamber (6) above the melt (1); (c) adjusting the thermal equilibrium and stabilising the pulling process; and (d) raising the crucible (2) at a predetermined velocity so that the additive component dips into and is continuously dissolved in the melt (1), while contra-rotating the crucible (2) and the seed crystal (3) and synchronising the additive component immersion velocity (Vst) and the mixed crystal (7) pulling velocity. Also claimed is a pulling chamber for carrying out the above process.