Crystalline thin film semiconductor device e.g. photovoltaic cell, has p-type polycrystalline silicon layer which is formed by crystallizing amorphous silicon layer formed on glass substrate

摘要

An amorphous silicon layer (3) formed on a glass substrate (1), is crystallized through nickel layer (4) to form a p-type polycrystalline silicon layer of specific orientation. An i-type polycrystalline silicon layer is then formed on the p-type polycrystalline silicon layer. An Independent claim is also included for crystalline thin film semiconductor device manufacturing method.