| 摘要 |
PURPOSE: A non-volatile semiconductor memory device having shared row selection structure is provided to have a row selection circuit configured to be shared by adjacent memory blocks. CONSTITUTION: The first and second memory blocks(110L,110R) comprise a plurality of strings, respectively. Each of the strings includes the first select transistor connected to the first select line, the second select transistor connected to the second select line, and memory cells connected in series between the select transistors. A logic circuit(131') generates a block select signal in response to block select information. A precharge circuit(132L,132R) supplied with the first to third high voltages precharges the first and second block word lines(BLKWL1,BLKWL2), isolated from each other, by the third high voltage without voltage drop when the block select signal is activated. The first switch circuit(120R) comprises a plurality of the first pass transistors(SW20-SW27) whose gates are connected commonly to the block word line(BLKWL1), and the second switch circuit(120L) comprises a plurality of the second pass transistors(SW20-SW27) whose gates are connected commonly to the block word line(BLKWL2).
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